Chemical vapor deposition (CVD) is one of the effective methods for growing large areas of high-quality graphene. In the process of graphene CVD growth, metal catalysts are used, and graphene needs to be transferred to build electrical devices, which is incompatible with current semiconductor processing technology. At the same time, transfer will cause graphene folds, damage and reduce its electrical properties. If metal-free catalytic growth of graphene can be achieved on an insulating substrate, then electrical devices can be constructed directly without transfer. However, unlike the self-limited growth method on most metal substrates, the CVD growth of graphene on insulating substrates is often accompanied by shortcomings such as slow growth rate and repeated nucleation, thus forming graphite with poor uniformity and an uncertain number of layers Olefin film. Therefore, directly preparing a large-area uniform single-layer graphene thin film on an insulating substrate has a profound impact on its docking with the semiconductor industry and accelerating the industrial application of graphene.
With the support of the National Natural Science Foundation of China and the pilot project of the Chinese Academy of Sciences, the Key Laboratory of Organic Solids of the Institute of Chemistry, Chinese Academy of Sciences has long been committed to the research of CVD controllable graphene in your research group, and has made a series of progress (Adv. Mater.2015 , 27, 2821-2837; Adv. Mater. 2015, 27, 4195-4199; Adv. Mater. 2016, 28, 4956-4975; Adv. Mater. Interfaces 2016, 3, 1600347; J. Mater. Chem. C 2016 , 4, 7464-7471; Mater. Horiz. 2016, 3, 568; Chem. Mater. 2017, 29, 1022-1027; Nat. Commun. 2017, 8, 14029; Carbon 2017, 121, 1-9; Adv. Mater. Interfaces 2018, 5, 1800347; Angew. Chem. Int. Ed. 2018, 57, 192-197; Mater. Horiz. 2018, 5, 1021-1034; Chem. Mater. 2019, 31, 1231; Adv. Mater . Technol.2019,4,1800572; Diamond Relat. Mater.2019,91, 112-118; Small Methods 2019,31, 2507).
Recently, researchers have adopted a new precursor control strategy to successfully inhibit the secondary nucleation of graphene, thereby directly growing a large area of ​​high-quality uniform single-layer graphene film directly on the insulating substrate. Through the study of the growth mechanism of graphene, it is known that the hydroxylation on the surface of the silicon dioxide substrate weakens the bond between the graphene edge and the substrate, thereby achieving the primary nucleation-dominated graphene growth. The field-effect transistor (FET) device test results show that the prepared uniform single-layer graphene film has excellent electrical properties, and the mobility is up to 3800 cm2 V-1 s-1, which is currently a graphene thin film device grown on an insulating substrate The highest performance value. This simple and controllable method of preparing high-quality graphene thin films on insulating substrates without any complicated transfer process makes the application of graphene in the field of integrated electronics and optoelectronics a step further. In this work, the researchers and Xu Zhiping, a professor of the Department of Engineering Mechanics of Tsinghua University, conducted a close cooperative research on the growth mechanism of graphene. The relevant research results were published in the Journal of the American Chemical Society (J. Am. Chem. Soc ., 2019, 141, 11004-11008), the corresponding authors are Yu Gui and Xu Zhiping, and the first author is Wang Huaping.
Schematic diagram of graphene film growth and performance characterization of field effect transistors
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