Recently, the Shanghai Advanced Research Institute of the Chinese Academy of Sciences and Jinneng Clean Energy Technology Co., Ltd. have made progress in the research of new metal oxide / silicon heterojunction solar cells. The relevant results are based on Interfacial Behavior and Stability Analysis of p-Type Crystalline Silicon Solar Cells Based on Hole-Selective MoOX / Metal Contacts was published in the Advanced Materials sub-Journal Solar RRL (DOI: 10.1002 / solr.201900274).
The effective spatial separation and collection of photo-generated carriers is one of the core problems of crystalline silicon and other types of photovoltaic devices. A carrier selective contact layer is formed on the surface of the crystalline silicon, allowing one carrier to pass through and blocking the other carrier. Compared with the traditional diffusion doping technology, the selective contact layer can alleviate the disadvantages caused by heavy doping (such as Auger recombination and narrow bandwidth). Based on the principle of carrier selective contact, amorphous silicon / crystalline silicon heterojunction (Heterojunction with Intrinsic Thin layer, HJT) batteries have achieved large-scale production. The HJT industrial technology jointly developed by the R & D team of Shanghai Research Institute and Jinneng Clean Energy Technology Co., Ltd. has achieved an efficiency of 24.7% on 6-inch cells. However, HJT batteries also face problems such as poor thermal stability and parasitic optical absorption.
Focusing on this, researcher Li Dongdong, associate researcher Yin Min of the Shanghai Institute of Advanced Research and the project R & D team built a Si / MoOX / Al (x <3) heterojunction full back contact battery on the back of the p-type crystalline silicon (Figure 1a), the system Demonstrated the hole transport performance, passivation performance and interface stability of MoOX. Considering that the metals Ag and Cu have higher reflectivity at long wavelengths, p-Si / MoOX / Ag and p-Si / MoOX / Cu batteries were further constructed, and conversion efficiencies of 18.74% and 17.61% were obtained, which were higher than 16.36% of p-Si / MoOX / Al batteries. The large area battery (246.21 cm2) of p-Si / MoOX / Ag battery also has an efficiency of 18.49% (Figure 1b).
By carefully studying the evolution of the Si / MoOX / metal interface, the article reveals the reason for the decline in battery efficiency. Si / MoOX is prone to redox reaction, and the SiOX transition layer is formed during the film deposition process; the redox reaction (Al electrode) (Fig. 1c) or metal atom diffusion (Ag, Cu electrode) occurs at the MoOX / metal interface. These interface changes make the electronic state of MoOX increase and the work function decrease, which affects the selective transport of holes. This work points out the importance of choosing appropriate MoOx proximity layer materials and fine-tuning the interface to improve the stability of MoOX-based heterojunction batteries.
The first author of the article is Dr. Cao Shuangying, Shanghai Institute of Advanced Research. This work was supported by the National Natural Science Foundation of China, Shanghai Science and Technology Commission, and the Youth Innovation Promotion Association of the Chinese Academy of Sciences.
(A) Schematic diagram of p-Si / MoOX / metal battery structure; (b) JV curve of p-Si / MoOX / Ag large area battery; (c) Electron micrograph of Si / MoOX / metal interface before and after annealing.
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