Hitachi and Renesas Technology Corp. today announced successful prototypes of low-power phase-shift memory cells. This non-volatile semiconductor memory cell can be programmed with a supply voltage of 1.5V and currents as low as 100μA - a reduction in power consumption per unit compared to previous releases from Hitachi and Renesas 50%. In addition, the new phase conversion unit is superior in terms of high-speed read/write capability, program durability, small size, and high level integration with respect to existing nonvolatile memories. As a result, these prototypes provide a promising solution for on-chip programming and data storage for embedded applications such as information devices, home appliances, and in-vehicle devices and control systems in next-generation microcontrollers.
The prototype unit is fabricated in a 130 nm CMOS process. The structure uses a MOS transistor and a phase conversion film that is amorphous* (high impedance) or crystalline (low impedance) in thermal response. Programming of the two states is achieved by a 180 nm diameter tungsten lower electrode contact (BEC). In a read operation, the stored digital (1 or 0) information is determined by the difference in current flow in the film.
In order to achieve breakthrough power consumption, Hitachi and Renesas researchers have developed an original low-current phase-conversion film with low-voltage programming capability. They used a controlled bismuth-tellurium-tellurium (GeSbTe) oxygen doping material to grow the film. Oxygen doping limits the impedance of the phase-converting film to an optimum level while suppressing excessive current flow during programming. Furthermore, the implementation of the cell can reduce the gate width of the MOS transistors forming these cells, as well as the number of output MOS transistors, thereby helping to reduce the size of the memory cells and drive circuits.
Details of the breakthrough low-power MOS phase-shift memory cell technology were disclosed in a technical paper presented at the International Electronics Conference in Washington, DC, on December 5, 2005.
Although there are many types of tapping screws, they all have the following similarities:
(1) are generally made of carbonized carbon steel (accounting for 99% of total production). It can also be made of stainless steel or non-ferrous metals.
(2) The product must be heat treated. Carbon steel tapping screws must be carbonized and stainless steel tapping screws must be solution hardened. In order to make tapping screws to meet the requirements of the standard of mechanical properties and performance.
(3) The product surface hardness is high, the core toughness is good. That is, "soft inside strong outside". This is a major feature of tapping Screw performance requirements. If the surface hardness is low, it can not be screwed into the matrix; If the core toughness is poor, a twist will break, can not be used. So "inside soft outside steel" is self-tapping screw to meet the use of performance, very important requirements.
(4) The surface of the product needs surface protection treatment, generally electroplating treatment. Some product surface must be treated by phosphate (photostatting), such as wall panel self - tapping screws for photostatting.
(5) Production by cold heading process. It is recommended to use high-speed cold heading machine and high-speed wire rolling machine or high-speed planetary wire rolling machine. High speed is emphasized here to ensure product quality. Only the head of tapping screw produced by high-speed machine is well formed and the thread quality is high.
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